Progress and outlook for mram technology

Abstract

We summarize the features of existing semiconductor memories and compare them to Magnetoresistive Random Access Memory (MRAM), a semiconductor memory with magnetic bits for nonvolatile storage. MRAM architectures based on Giant Magnetoresistance (GMR) and Magnetic Tunnel Junction (MTJ) cells are described. This paper will discuss our progress on improving the material structures, memory bits, thermal stability of the bits, and competitive architectures for GMR and MTJ based MRAM memories as well as the potential of these memories in the commercial memory market. Index terms - Giant magnetoresistance, GMR, magnetic tunnel junction, MTJ, magnetoresistive random access memory, MRAM © 1999 IEEE.