A p-ZnTe/n-CdMnTe/n-GaAs diode was grown by MBE technology. The current-voltage characteristics of the grown device were analyzed under dark and illumination conditions. Thermionic emission and the space charge limited current were used to interpret the IV conduction mechanism through the heterostructure p-ZnTe/n-CdMnTe/n-GaAs at different temperatures. Photovoltaic parameters such as the short-circuit current I(sc) and open-circuit voltage V(oc), power P = IV, maximum power P(max), maximum current I(M) and maximum voltage V(M) were calculated at different light intensities. The dynamic IV characteristics under illumination exhibit the photovoltaic behavior of the investigated sample. Photosensitivity and the responsivity of the prepared device were calculated at different illumination intensities. p-ZnTe/n-CdMnTe/n-GaAs is a new promising candidate for photovoltaic devices.
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