Progress in metal-organic chemical vapor deposition of high quality (0001¯) N-polar (Al, Ga, In)N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key process components such as utilization of vicinal substrates, conditions ensuring a high surface mobility of species participating in the growth process, and low impurity incorporation. The high quality of the fabricated films enabled the demonstration of N-polar (Al, Ga, In)N based devices with excellent performance for transistor applications. Challenges related to the growth of high quality N-polar InGaN films are also presented.
CITATION STYLE
Keller, S., Li, H., Laurent, M., Hu, Y., Pfaff, N., Lu, J., … Mishra, U. K. (2014, November 1). Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides. Semiconductor Science and Technology. Institute of Physics Publishing. https://doi.org/10.1088/0268-1242/29/11/113001
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