Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

Abstract

Ru nano-dots were embedded in a Pt/ TiO2 /Pt resistive switching cell to improve the uniformity of the switching parameters. The TiO2 film grown on the Ru nano-dots had a rutile structure locally whereas other parts of the TiO2 film had an anatase structure. The rutile-structured TiO2 formed conducting filaments easily and their rupture was much more uniform than the randomized ones in anatase TiO 2. This largely improved the resistance uniformity at the reading voltage during the repeated resistance switching events. The improvement was also attributed to the high leakage current of the pristine sample at the reading voltage. © 2010 American Institute of Physics.