Schottky contact formation on p-GaN using a W 2B-based metallization scheme was investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V), and capacitance-voltage (C-V) measurements. The Schottky barrier height (SBH) determined from XPS is 2.7 eV, whereas fitting of the I-V's gives 1.2 and 3.8 eV depending on the assumed mechanism of forward current flow. While the C-V's and the measurement temperature dependence of the I-V's support tunneling as being the dominant transport mechanism, this latter approach overestimates the true SBH of W 2B/p-GaN contacts due to the presence of an interfacial layer acting as an additional barrier to carrier transport. © 2006 American Institute of Physics.
CITATION STYLE
Stafford, L., Voss, L. F., Pearton, S. J., Chen, J. J., & Ren, F. (2006). Schottky barrier height of boride-based rectifying contacts to p-GaN. Applied Physics Letters, 89(13). https://doi.org/10.1063/1.2357855
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