A simple and accurate method is presented for extraction of the gate resistance components of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. Also, the gate electrode resistance was separated into an external component and an internal component. The gate electrode resistance was extracted at OFF state, and the channel resistance was extracted with at ON state. The simple extraction methodology is applied to extract parameters from the measured S-parameters of RF MOSFETs that are fabricated with 130-nm CMOS technology.
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