Spin Polarization of Semiconductor Carriers by Reflection off a Ferromagnet

  • Ciuti C
  • McGuire J
  • Sham L
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Abstract

We present a theory of generation or alteration of the electron spin coherence and population in an n-doped semiconductor by reflection at the interface with a ferromagnet. The dependence of the spin reflection on the Schottky barrier height and the doping concentration in the semiconductor was computed for a generic model. The theory provides an explanation for the spontaneous electron spin coherence and nuclear polarization in the semiconductor interfaced with a ferromagnet and associated phenomena recently observed by time-resolved Faraday rotation experiments. The study also points to an alternative approach to spintronics different from spin injection.

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Authors

  • C. Ciuti

  • J. P. McGuire

  • L. J. Sham

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