Spin Polarization of Semiconductor Carriers by Reflection off a Ferromagnet

Abstract

We present a theory of generation or alteration of the electron spin coherence and population in an [Formula presented]-doped semiconductor by reflection at the interface with a ferromagnet. The dependence of the spin reflection on the Schottky barrier height and the doping concentration in the semiconductor was computed for a generic model. The theory provides an explanation for the spontaneous electron spin coherence and nuclear polarization in the semiconductor interfaced with a ferromagnet and associated phenomena recently observed by time-resolved Faraday rotation experiments. The study also points to an alternative approach to spintronics different from spin injection. © 2002 The American Physical Society.