Spin transport in memristive devices

  • Jang H
  • Kirillov O
  • Jurchescu O
 et al. 
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We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOx memristive devices consisting of Co/TaOx/Cu/Py with crossbar-type electrode geometry. The devices show memristive behavior having a typical OFF/ON resistance ratio of 105. Magnetoresistance measurements performed by sweeping an external magnetic field clearly indicate spin transport through an electrochemically formed copper nano-filament as long as 16 nm in the memristive ON-state at 77 K. Spin transport vanishes in the OFF-state. These data are strong evidence that the fundamental switching mechanism in these metal-oxide devices is the formation of continuous metallic conduction paths.

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  • Hyuk-Jae Jae Jang

  • Oleg A. Kirillov

  • Oana D. Jurchescu

  • Curt A. Richter

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