The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4±0.08 arc seconds. The average density of dislocations revealed by molten KOH is 2.0 × 104cm-2, and the highest density is 3.1 × 104cm-2. The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. © 1999 COSPAR. Published by Elsevier Science Ltd.
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