While searching for bismuth precursors for thin film preparation by atomic layer deposition (ALD) three bismuth alkoxides Bi(OtBu)3 (1), Bi(OCMe2iPr)3 (2), Bi(OC iPr3)3 (3), bismuth β-diketonate, Bi(thd)3 (4), and bismuth carboxylate, Bi(O2C tBu)3 (5), were synthesized and evaluated. The compounds were characterized by CHN, NMR, MS, and TGA/SDTA. Earlier unknown crystal structures of compounds 1 and 3 were solved. Compound 1 forms dimeric and loose polymeric structures in the solid state while 3 is strictly monomeric. For compound 2 crystals suitable for complete structure solution could not be grown. Crystallization trials of 2 from hexane and toluene resulted in oxygen bridged tetramer [Bi2O(OCMe2iPr)4] 2 (6). Compound 4 has dimeric structure and compound 5 forms loose tetramers as reported earlier. The structure of toluene solvated crystal [Bi(O2CtBu)3]4·2MeC 6H5 (7) was solved. All compounds studied showed relatively good volatility and thermal stability. They were all tested in ALD deposition experiments, in which compound 2 was found to be the most suitable for ALD growth of Bi2O3. It exhibited a clear improvement over Bi precursors studied earlier. © The Royal Society of Chemistry 2010.
CITATION STYLE
Hatanpää, T., Vehkamäki, M., Ritala, M., & Leskelä, M. (2010). Study of bismuth alkoxides as possible precursors for ALD. Dalton Transactions, 39(13), 3219–3226. https://doi.org/10.1039/b918175j
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