Abstract
ZnTe/ZnSe distributed Bragg reflectors with 98% reflectance were grown on GaAs (001) by molecular beam epitaxy. The center of the stop band was designed to be at 570nm. The reflectivity spectrum was simulated using the dielectric model and the matrix method in optics.
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CITATION STYLE
APA
Fu, C. B., Yang, C. S., Kuo, M. C., Lai, Y. J., Lee, J., Shen, J. L., … Jeng, S. (2003). High Reflectance ZnTe/ZnSe Distributed Bragg Reflector at 570 nm. Chinese Journal of Physics, 41(5), 535–543.
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