Low-distortion CMOS transconductor

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Abstract

A new transconductor based on MOS transistors operating in saturation is proposed. Linearisation is achieved in a common-source pair bydriving the devices in a purely antiphasemode. Simulation results show that the proposed transconductor would typically exhibit less than1% THD for input signals up to 5-7V. © 1990, The Institution of Electrical Engineers. All rights reserved.

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Wilson, G., & Chan, P. K. (1990). Low-distortion CMOS transconductor. Electronics Letters, 26(11), 720–722. https://doi.org/10.1049/el:19900470

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