Modeling of Random Telegraph Noise under circuit operation Simulation and measurement of RTN-induced delay fluctuation

Abstract

This paper presents a new model for the statistical analysis of the impact of Random Telegraph Noise (RTN) on circuit delay. This RTN-aware delay model have been developed using Pseudo RTN based on a Markov process with RTN statistical property. We have also measured RTN-induced delay fluctuation using a circuit matrix array fabricated in a 65nm process. Measured results include frequency fluctuations that have power spectrum density of 1/f2 property, which clearly indicates the effect of RTN-induced delay fluctuations. From the comparison of the maximum frequency shifts obtained by measurements and simulations, the Vgs-dependency of RTN-induced Vth attenuates the RTN impact on delay around by half. © 2011 IEEE.