Schottky barrier height dependence on Si crystal orientation

Abstract

Planar AlSingle Bond signnSi and PtSiSingle Bond signnSi Schottky barriers with diffused p-type guard rings have been fabricated on (111) and (100) silicon surfaces. The barriers have been produced by sputtering the metals on sputter-etched silicon surfaces. For AlSingle Bond signnSi barriers the barrier height is 0.72 eV on (111) surfaces and 0.81 eV on (100) surfaces, as determined from the forward I-V characteristic. This difference in barrier potential has been confirmed by C-V measurements. No difference in barrier height is found for PtSiSingle Bond signnSi barriers made on (111) and (100) surfaces. A qualitative explanation is given for the experimental results in terms of strong or weak coupling of surface states to the metal. © 1972 The American Institute of Physics.