We demonstrate with spatially resolved, in situ temperature measurements and ex situ reflectance measurements that differences in appearance for masked and unmasked surfaces on patterned growth substrates arise from wavelength-dependent emissivity variations and not from actual temperature differences. For this study, Si(111) substrates were coated with thin AlN buffer layers (about 40 nm thick) and then further coated with a SiNx mask layer (about 60 nm thick). "Blackbody" emission spectra were collected from homogeneous regions at growth temperatures near those that allow the selective epitaxy of catalyst-free GaN nanowires on the AlN by molecular beam epitaxy. The data were acquired with a commercial in situ diagnostic system that incorporates optical fiber collection to limit the sampling area to a circle about 5 mm in diameter on the substrate. The emittance spectra are estimated from room-temperature reflectance measurements. The implication for selectivity mechanisms and temperature measurements in molecular beam epitaxy in general are also discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
CITATION STYLE
Bertness, K. A., Brubaker, M. D., Harvey, T. E., Duff, S. M., Sanders, A. W., & Sanford, N. A. (2014). In situ temperature measurements for selective epitaxy of GaN nanowires. Physica Status Solidi (C) Current Topics in Solid State Physics, 11(3–4), 590–593. https://doi.org/10.1002/pssc.201300545
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