Abstract
The characteristics of junctionless multigate transistor (JMT) with fin vertical nonuniformity are investigated using three-dimensional simulation for the first time. The results show that the electrical characteristics, such as on-state current (Ion), subthreshold swing (SS) and drain induced barrier lowering (DIBL) effect, are affected by the sidewall angle (θ). The more superior SS and DIBL features also with smaller fluctuations have been observed in JMTs as compared with inversion-mode multigate MOSFETs (IM-MuGFETs). Hence, JMT is beneficial to suppress the short channel effects in the scaled devices. © 2012 IEEE.
Cite
CITATION STYLE
Lou, H., Li, B., Lin, X., He, J., & Chan, M. (2012). Investigations of fin vertical nonuniformity effects on junctionless multigate transistor. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. https://doi.org/10.1109/ICSICT.2012.6467617
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