Abstract
IN A CONTINUING EFFORT to lower the cost, increase the density, and improve the performance of semiconductor memories, a 16384 x 1 bit single transistor cell RAM has been designed. It is fabricated using N-channel two-layer Si-gate technology.
Cite
CITATION STYLE
APA
Ahlquist, C. N., Breivogel, J. R., Koo, J. T., McCollum, J. L., Oldham, W. G., Renninger, A. L., & Vadasz, L. L. (1976). A 16K dynamic RAM. In Digest of Technical Papers - IEEE International Solid-State Circuits Conference (Vol. 19, pp. 128–129). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ISSCC.1976.1155553
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