Abstract
Recently several NMOS 4K static RAMS with a typical access time of less than 25ns have been developed utilizing a scaling technique'. Most of them have suffered from high operating and standby power consumption. On the other hand, an access time faster than -4Ons has not been achieved yet in low power CMOS RAMs2.
Cite
CITATION STYLE
Isobe, M., Uchida, Y., Maeguchi, K., Mochizuki, T., Kimura, M., Hatano, H., … Tango, H. (1981). An 18ns CMOS/SOS 4K static RAM. In Digest of Technical Papers - IEEE International Solid-State Circuits Conference (Vol. 1981-February). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ISSCC.1981.1156152
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