Abstract
The realization of a 4-bit NROM cell is possible due to the two physically separated bits on each side of the cell. Only 4 Vt levels on each bit are required. Key features of a 4-bit product are optimized technology, accurate and fast programming algorithm (3MB/s write speed), no single bit failures and window sensing with moving reference as an error detection and correction scheme. © 2005 IEEE.
Cite
CITATION STYLE
APA
Eitan, B., Cohen, G., Shappir, A., Lusky, E., Givant, A., Janai, M., … Maayan, E. (2005). 4-bit per cell NROM reliability. In Technical Digest - International Electron Devices Meeting, IEDM (Vol. 2005, pp. 538–542). https://doi.org/10.1109/iedm.2005.1609402
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