Abstract
A novel geometrically scalable, phenomenological model for quantum mechanical carrier charge centroid in thin fins is presented. A model for capturing the capacitance characteristics of a graded double-junction arising out of punch-through stop implant in bulk-FinFETs is also proposed. Developed models have been included in BSIM-CMG multi-gate transistor compact model.
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Venugopalan, S., Karim, M., & Niknejad, A. (2012). Compact Models for Real Device Effects in FinFETs. 2012 International Conference on Simulation of Semiconductor Processes and Devices, 292–295. Retrieved from http://in4.iue.tuwien.ac.at/pdfs/sispad2012/15-4.pdf
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