Abstract
Donor binding energies of positively and negatively charged impurities in a strained InGaN/GaN cylindrical quantum wire are investigated. The interband optical transition with and without the exciton is computed as a function of wire radius. The exciton oscillator strength and the exciton lifetime for radiative recombination as a function of wire radius have been computed.
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CITATION STYLE
APA
CST Microwave studio. (2008). IEEE Microwave Magazine, 7(4), 11–11. https://doi.org/10.1109/mmw.2006.1663969
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