Journal Article

Development of a vertical gradient freeze process for low EPD GaAs substrates

Materials Science and Engineering B: Solid-State Materials for Advanced Technology (2001) 80(1-3) 5-9
DOI: 10.1016/S0921-5107(00)00573-0
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Abstract

The global and local geometrical characteristics and the surface quality of wafers manufactured from 4 inches semi-insulating (SI) and semiconducting (SC) vertical gradient freeze (VGF) GaAs crystals do not differ from those produced state-of-the art 4 inches SI LEC material. Epi-ready surface quality for both molecular beam epitaxy and metalorganic chemical vapor deposition application was demonstrated.

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Bünger, T., Behr, D., Eichler, S., Flade, T., Fliegel, W., Jurisch, M., … Weinert, B. (2001). Development of a vertical gradient freeze process for low EPD GaAs substrates. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 80(1–3), 5–9. https://doi.org/10.1016/S0921-5107(00)00573-0

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