Abstract
Varactor diode-based circuit topologies, which can act as high-Q "distortion-free" tunable capacitive elements, are presented. These diodes are implemented in a novel ultra low-loss silicon-on-glass technology, with resulting measured Q's of over 200 at 2 GHz. The measured IM3 improvement compared to traditional single varactor tuning techniques is greater than 30 dB. © 2005 IEEE.
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Buisman, K., De Vreede, L. C. N., Larson, L. E., Spirito, M., Akhnoukh, A., Scholtes, T. L. M., & Nanver, L. K. (2005). “Distortion-free” varactor diode topologies for RF adaptivity. In IEEE MTT-S International Microwave Symposium Digest (Vol. 2005, pp. 157–160). https://doi.org/10.1109/MWSYM.2005.1516547
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