Abstract
We report on single electron pumping via a tunable number of individual donors. We use a device that essentially consists of a silicon nanowire with local arsenic implantation between a set of fine gates. A temperature-dependent characterization of the pumped current allows us to extract the ionization energy of a single arsenic donor. We observe the ionization energy to be tunable by the gate electric field over a large range of energies. © 2012 American Chemical Society.
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Lansbergen, G. P., Ono, Y., & Fujiwara, A. (2012). Donor-based single electron pumps with tunable donor binding energy. Nano Letters, 12(2), 763–768. https://doi.org/10.1021/nl203709d
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