Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3-Terminal Devices

Abstract

Resistive switching effects are in a superb position to tackle the challenges for the near future of nanoelectronics and neuromorphics. Material-wise, the outstanding properties of strongly correlated metallic perovskite oxides, in particular, those displaying metal–insulator transition can be exploited for a new generation of devices based on a volume resistive switching (VRS) phenomenon beyond filamentary and interface ideas. This study reports a full description of this new and robust physical mechanism governing VRS memory effects in mixed-valence mixed-conductor metallic La1−xSrxMnO3−y perovskites by identifying the role and rate limiting steps of oxygen exchange through oxygen partial pressure experiments. It is demonstrated that oxygen migration can be smartly engineered by introducing a CeO2−x capping layer, which is further used to validate the VRS phenomenon by operating a nonvolatile and volumetric proof-of-concept gate-controlled three-terminal conductive bridge device.