Abstract
The authors succeeded in both preparing Mg-doped p-type GaN films by using the LEEBI treatment and developing a high efficiency GaN p-n junction LED
Cite
CITATION STYLE
APA
Amano, H., & Akasaki, I. (1990). GaN blue and ultraviolet light emitting devices. Solid State Physics|Solid State Physics, 25(6), 399–405. Retrieved from <Go to ISI>://INSPEC:3740779
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