Growth of thin iron oxide films on SI(100) by MOCVD

Abstract

Thin iron oxide films were deposited on Si(100) by MOCVD at 55 mbar and temperatures between 670 and 1020 K. Ferrocene and oxygen were used as precursors. The growth rate was measured as a function of temperature and the films were characterized by x-ray diffraction (XRD), Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The change from the kinetically controlled regime to the transport controlled regime occurs near 750 K. At similar temperatures, a phase change of the deposited material was observed. Films prepared at temperatures higher than 820 K show the structure of α-Fe2O3, whereas deposition at lower temperature leads to the growth of α-Fe2O3 and other oxide phases. The XRD-pattern of these films can be explained by the coexistence of different iron oxide phases, namely α-Fe2O3, γ-Fe2O3 and/or β-Fe2O3.