Abstract
The paper reports microwave properties of AlGaN/GaN HEMT fabricated on sapphire substrate. The measured transition frequency as well as maximum frequency of oscillation was taken as a figure of merit for comparison of influence of different treatment. Using 2μm length of gate electrode 7.425 GHz transition frequency as well as 23.437 GHz maximum frequency of oscillation was achieved. Significant influence of surface plasma treatment on HEMT microwave properties was found. © 2008 IEEE.
Cite
CITATION STYLE
Tomáška, M., Lalinský, T., Vanko, G., & Mišun, M. (2008). High frequency characterization and properties of AlGaN/GaN HEMT structures. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems (pp. 331–334). https://doi.org/10.1109/ASDAM.2008.4743351
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