Abstract
The motivation and challenges of IC reliability simulation are discussed. Reliability simulator BERT is used to illustrate the physical models and approaches used to simulate the hot-electron effect, oxide time-dependent breakdown, electromigration, and bipolar transistor gain degradation. © 1992 IEEE
Cite
CITATION STYLE
APA
Hu, C. (1992). IC Reliability Simulation. IEEE Journal of Solid-State Circuits, 27(3), 241–246. https://doi.org/10.1109/4.121544
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