Abstract
The present invention relates to substrate process ing. More particularly, this invention relates to methods and systems for controlling the gate dielectric interface of metal on-semiconductor eld-effect transistors (MOSFETs).
Cite
CITATION STYLE
APA
Niyogi, Sandip, Barstow, S., & Lang, C.-I. (2014). METHODS AND SYSTEMS FOR CONTROLLING GATE DIELECTRIC INTERFACES OF MOSFETS. In US Patent Application (Vol. 1).
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