Abstract
The effects of an (almost) birds beak free LOCOS isolation configuration on the charactcristics of narrow-width MOSFETs has been investigated by 2-D device simulation and measurements of realized structures. Owing to the occurrence of excess inversion charge peaks at the LOCOS corners, an anomalous behaviour of the subthreshold characteristics and the threshold voltage is observed for device widths smaller than 1 μm. In addition a change of the birds beak length with the active area width results in a nonlinear dependence of the gain factor.
Cite
CITATION STYLE
Klaassen, F. M., Van Der Plas, P. A., Debets, R. J. W., Wils, N. A. H., & Pitt, M. G. (1989). Narrow-width effects in submicron MOS ICs. In European Solid-State Device Research Conference (pp. 105–108). IEEE Computer Society.
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