Nonvolatile organic field-effect transistor memory element with a polymeric gate electret

Abstract

Organic field-effect transistors with a polymeric electret as gate insulator and fullerenes as a molecular semiconductor were fabricated. We observed an amplification of the drain-source current Ids on the order of 104 upon applying a gate voltage Vg. Reversing the gate voltage Vg features large metastable hysteresis in the transfer characteristics Ids (Vg) with a long retention time. The observation of a switchable channel current Ids is proposed to originate from charge storage in the organic electret. As such, this device is a demonstration of an organic nonvolatile memory element switchable with the gate voltage. © 2004 American Institute of Physics.