Power electronics on InAlN/(In)GaN: Prospect for a record performance

Abstract

We compare basic physical parameters of Al0.2Ga0.8N/GaN quantum well with In0.17Al0.83N/GaN and In0.17Al0.83N/In0.10Ga0.90N quantum well parameters, respectively. It is shown that in comparison to conventional AlGaN/GaN approach, structures based on InAlN/(In)GaN should exhibit two to three times higher quantum well polarization-induced charge. We use high electron mobility transistors (HEMT) analytical model to calculate InAlN/(In)GaN HEMTs drain currents and transconductances. A 3.3 A/mm and 2.2 A/mm drain current was calculated for In0.17Al0.83N/In0.10Ga0.90N and In0.17Al0.83N/GaN HEMTs, respectively. This represents up to 205% current increase if compared with AlGaN/GaN HEMT and a record power performance can be expected for new structures.