Abstract
This paper reviews our recent research progress on new transparent conductive oxide (TCO) materials and electronic and optoelectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(β-Ga2O3), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO2F), amorphous TCOs, and nanoporous semiconductor 12CaO · 7Al2O3. Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in p-type layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials. © 2006 Elsevier B.V. All rights reserved.
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Hosono, H. (2007). Recent progress in transparent oxide semiconductors: Materials and device application. Thin Solid Films, 515(15 SPEC. ISS.), 6000–6014. https://doi.org/10.1016/j.tsf.2006.12.125
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