A resonant accelerometer with two-stage microleverage mechanisms fabricated by SOI-MEMS technology

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Abstract

We present the design, fabrication, and testing of a push-pull differential resonant accelerometer with double-ended-tuning-fork (DETF) as the inertial force sensor. The accelerometer is fabricated with the silicon-on-insulator microelectromechanical systems (MEMS) technology that bridges surface micromachining and bulk micromachining by integrating the 50-μm-thick high-aspect ratio MEMS structure with the standard circuit foundry process. Two DETF resonators serve as the force sensor measuring the acceleration through a frequency shift caused by the inertial force acting as axial loading. Two-stage microleverage mechanisms with an amplification factor of 80 are designed for force amplification to increase the overall sensitivity to 160 Hz/g, which is confirmed by the experimental value of 158 Hz/g. Trans-resistance amplifiers are designed and integrated on the same chip for output signal amplification and processing. The 50-μm thickness of the high-aspect ratio MEMS structure has no effect on the amplification factor of the mechanism but contributes to a greater capacitance force; therefore, the resonator can be actuated by a much lower ac voltage comparing to the 2-μm-thick DETF resonators. The testing results agree with the designed sensitivity for static acceleration. © 2005 IEEE.

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Su, S. X. P., Yang, H. S., & Agogino, A. M. (2005). A resonant accelerometer with two-stage microleverage mechanisms fabricated by SOI-MEMS technology. IEEE Sensors Journal, 5(6), 1214–1222. https://doi.org/10.1109/JSEN.2005.857876

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