Abstract
An analytical on-state breakdown model for high voltage RESURF LDMOS has been proposed in this paper. The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n-drift in LDMOS at on-state can be obtained. Based on this model, the safe operating area (SOA) of LDMOS can be calculated. The analytical results are partially fitting with our numerical (by MEDICI) and experiment results. This model is aid in understanding the device physics during on-state in accuracy and it also directs high voltage LDMOS design.
Cite
CITATION STYLE
Fang, J., Li, Z., & Zhang, B. (2004). Study for safe operating area of high voltage LDMOS. In Proceedings of 2004 International Conference on the Business of Electronic Product Reliability and Liability (pp. 15–18). https://doi.org/10.1109/beprl.2004.1308143
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