Abstract
Low noise amplifier is the front end block of radio-frequency receiver system. Its design required various characteristics such as power gain, noise figure, insertion losses and power consumption. In this paper we have proposed a single stage low noise amplifier design with high gain and low noise using inductive source degeneration topology for frequency range of 3 GHz to 7 GHz and also use the active biasing devices. A range of devices like inductors and capacitors are used to achieve 50 input impedance with a low noise factor. The design process is simulated process is using Advance Design System (ADS) and implemented in TSMC 0.18 µm CMOS technology. A single stage low noise amplifier has a measured forward gain 25.4 dB and noise figure 2.2 dB at frequency 5.0 GHz.
Cite
CITATION STYLE
Kumar, R. (2012). Design and Noise Optimization of RF Low Noise Amplifier for IEEE Standard 802.11A WLAN. International Journal of VLSI Design & Communication Systems, 3(2), 165–173. https://doi.org/10.5121/vlsic.2012.3214
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