Abstract
This paper proposes a wideband low noise amplifier adopting feedback networks to improve gain and noise performance. In the proposed work, the dual-path of complementary NMOS and PMOS configuration boosts the gain of common-gate stage, which reduces the power consumption and contributes to wideband input impedance matching simultaneously. Fabricated in SMIC 55nm RF-CMOS technology, the simulated results indicate that the S21 is 12.8 dB, noise figure is about 3 dB from 0.6 to 8 GHz, and IIP3 is -8 dBm at 5.175GHz. Its dissipative current is 12mA with 1.2 V supply and the whole area is 0.625 mm2.
Cite
CITATION STYLE
Bai, M., Chen, X., Zhao, Z., Zhao, Q., Mao, G., Li, W., … Meng, F. (2022). A Wideband Noise-Canceling Low Noise Amplifier Employing Current-Reuse and Positive-Negative Feedback Techniques. In IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IMWS-AMP54652.2022.10107026
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