Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy

Abstract

The rapid setup of the molecular beam epitaxy (MBE) growth process for GaInP/GaAs heterostructure bipolar transistor (HBT) in an all solid-source multiwafer production MBE system is reported. The first 100×100 μm2 large area test structures enable determination of the static gain, which is above 200. rf measurements on 8×10 μm2 devices exhibit a cut-off frequency fT of 34 GHz. Although most publications concerning production of such devices are related to metalorganic chemical vapor deposition grown material, we intend to demonstrate that MBE is a very efficient method for high volume production of GaInP/GaAs HBT. In particular we emphasize the fact that MBE growth for production of benchmark HBT devices is a high yield process that is attainable in a very short time. In order to optimize device characteristics further work focuses on metallurgical and electrical emitter/base interface studies by means of photoluminescence and I/V measurements on processed PN junctions.