Low-Capacitance Low-Voltage Transient Voltage Suppression Circuit by Diode Activated SiGe HBT in SiGe HBT BiCMOS Process

Dai, S. H., Peng, J. J., Chen, C. C., Lin, C. J., & King, Y. C. (2015). Low-Capacitance Low-Voltage Transient Voltage Suppression Circuit by Diode Activated SiGe HBT in SiGe HBT BiCMOS Process. Japan Society of Applied Physics. https://doi.org/10.7567/ssdm.2008.g-3-5