Abstract
The nanocrystalline ZnO:Fe semiconductor oxides were successfully synthesized via the sol-gel calcination method. Structural, optical and electrical properties of the investigated samples were characterized by various techniques such as atomic force microscopy (AFM), UV-vis absorption and electrical transport measurements. The optical band gap for undoped ZnO (3.19 eV) decreases (2.75 eV) with increasing Fe-doped ZnO (20%). The temperature dependences of the electrical conductivities of undoped ZnO and Fe-doped ZnO were measured and analyzed by Arrhenius equation. The electrical conductivity of the samples decreases with the increase of Fe doping ratio; hence, the electrical conductivity mechanism is controlled by thermally activated processes. To support the nanostructure of Fe-doped ZnO, AFM micrographs were performed. © 2012 Elsevier Ltd. All rights reserved.
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Aydn, C., Abd El-Sadek, M. S., Zheng, K., Yahia, I. S., & Yakuphanoglu, F. (2013). Synthesis, diffused reflectance and electrical properties of nanocrystalline Fe-doped ZnO via sol-gel calcination technique. Optics and Laser Technology, 48, 447–452. https://doi.org/10.1016/j.optlastec.2012.11.004
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