Abstract
IrSi Schottky-barrier detectors have been fabricated with [formula ommitet]40-[formula ommitet]A thick silicide electrodes formed on p-type Si substrates by in-situ processing in a conventional electron-beam evaporator. High-resolution transmission electron microscopy (TEM) shows that these detectors have clean, abrupt silicide-Si interfaces. For operation at a reverse-bias voltage of 2 V, the cutoff wavelength is [formula ommitet]10μm, as determined by quantum efficiency measurements. © 1988 IEEE
Cite
CITATION STYLE
Tsaur, B. Y., Weeks, M. M., Trubiano, R., Pellegrini, P. W., & Yew, T. R. (1988). IrSi Schottky-Barrier Infrared Detectors with 10-μm Cutoff Wavelength. IEEE Electron Device Letters, 9(12), 650–653. https://doi.org/10.1109/55.20425
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
