Abstract
Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation. © 2008 American Institute of Physics.
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CITATION STYLE
Fukata, N., Mitome, M., Bando, Y., Seoka, M., Matsushita, S., Murakami, K., … Sekiguchi, T. (2008). Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation. Applied Physics Letters, 93(20). https://doi.org/10.1063/1.3033226
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