1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

Abstract

The origin of performance difference between gate-first (GF) and replacement metal gate (RMG) fin field effect transistors (FinFETs) is investigated. Although RMG technology has the advantage of low thermal-budget, a 1.5 times lower effective hole mobility is shown for the high-k last (HKL) FinFET. Based on low frequency noise analysis, it is shown that the carrier transport is due to the carrier number fluctuation with correlated mobility fluctuation from the interface states. For HKL FinFETs, about 10 times higher trap density is observed compared to GF and high-k first FinFETs, which is generated during the dummy gate oxide removal process. © 2013 American Institute of Physics.