A GN model on photothermal interactions in a two-dimensions semiconductor half space

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Abstract

The model of coupled plasma and thermo-elastic wave were used to investigate the wave propagation in a two-dimensional semiconducting half space by using eigenvalues approach. By using Fourier and Laplace transformations with the eigenvalues techniques methodology, the exact solution of all physical quantities is obtained. The boundary edge of the plane is due to a heat flux with a pulse that decays exponentially and is taken as free of tractions. A semiconductor media such as silicon has been studied. The outcomes have been verified numerically and are represented graphically.

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Hobiny, A., & Abbas, I. (2019). A GN model on photothermal interactions in a two-dimensions semiconductor half space. Results in Physics, 15. https://doi.org/10.1016/j.rinp.2019.102588

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