Conductivity Modulation by CaVO 3 -based All-solid-state Redox Transistor with Ion Transport of Li + or H +

Abstract

* Correspondence to TSUCHIYA.Takashi@nims.go.jp CaVO3 (CVO)-based all-solid-state redox transistor with a Yttria-stabilized-ZrO2 (YSZ) H + ion conductor was fabricated. The electronic conductivity of the CVO was modulated by controlling oxygen nonstoichiometry due to H + insertion and desertion (redox reaction). The variation in drain current was larger than that of SrVO3 (SVO)-based all-solid-state redox transistor. For comparison, the CVO-based device with a Li2O-ZrO2-SiO2 (LZSO) Li + conductor was also investigated. The LZSO device also showed larger drain current enhancement than the SVO device. Controlling oxygen nonstoichiometry due to the redox reaction (H + or Li + insertion and desertion) is found to be effective for modulating electronic conductivity of CVO.