Abstract
CoSi2 is being used commonly for the advanced IC technologies. There are several process choices to be made for the formation of a high yielding and reproducible silicide. In this paper the various CoSi2 technologies will be discussed. The scalability of the process of record, the Co/Ti(cap) process will be presented for 0.18 μm and below.
Cite
CITATION STYLE
APA
Maex, K., Lauwers, A., Besser, P., Kondoh, E., De Potter, M., & Steegen, A. (1999). Self-aligned CoSi2 for 0.18 μm and below. IEEE Transactions on Electron Devices, 46(7), 1545–1550. https://doi.org/10.1109/16.772509
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