Self-aligned CoSi2 for 0.18 μm and below

58Citations
Citations of this article
2Readers
Mendeley users who have this article in their library.
Get full text

Abstract

CoSi2 is being used commonly for the advanced IC technologies. There are several process choices to be made for the formation of a high yielding and reproducible silicide. In this paper the various CoSi2 technologies will be discussed. The scalability of the process of record, the Co/Ti(cap) process will be presented for 0.18 μm and below.

Cite

CITATION STYLE

APA

Maex, K., Lauwers, A., Besser, P., Kondoh, E., De Potter, M., & Steegen, A. (1999). Self-aligned CoSi2 for 0.18 μm and below. IEEE Transactions on Electron Devices, 46(7), 1545–1550. https://doi.org/10.1109/16.772509

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free