Physical origins of 1/f noise in Si δ-Doped schottky diodes

Abstract

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current-voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs - model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1-10 special impurity atoms with stochastically modulated ionization energy. © World Scientific Publishing Company.