Fabrication of a transparent and flexible thin film transistor based on single-walled carbon nanotubes using the direct transfer method

Abstract

The fabrication of transparent and flexible thin film transistors (TFTs), using single-walled carbon nanotube (SWCNT) networks as bottom gates and conducting channels and polymethylmethacrylate (PMMA) as an insulating layer, by the direct transfer method is demonstrated. The fabricated SWCNT-TFTs exhibited a mobility of 23.4 cm2 /V s and an ON/OFF current ratio of ∼ 103. A minor decrease of ∼7% on the performance of the SWCNT-TFTs after bending to a radius of curvature of ∼6 mm was observed. The differences in performance of the devices fabricated with SWCNTs on SiO 2 /Si and those prepared by transferring SWCNTs onto a polycarbonate substrate are also discussed. © 2009 American Institute of Physics.