Modulation of the anisotropic electronic properties in res2 via ferroelectric film

Abstract

Anisotropic response in two-dimensional materials has emerged with attractive potential applications in angle-sensitive areas. However, the challenge with current studies on anisotropic response is due to the main use of the structural materials of pristine to examine the physical properties in different directions, which cause restriction of the anisotropic ratio within a narrowrange, thereby, limiting their practical applications. Herein, we aimed at developing a novel strategy to effectively modulate the electronic anisotropic ratio by employing rhenium disulfide (ReS2) nanosheet in a nondestructive fashion. We integrated a thin film of ferroelectric poly(vinylidene fluoride- co-trifluoroethylene) P(VDF-TrFE) on top of ReS2 nanosheet and modulated the conductivity of ReS2 within specific directions via selective polarization of the ferroelectric film. Our results demonstrated that the electronic anisotropic ratio was enhanced remarkably from the initial 1.4 to as high as ∼12.0. Thus, we concluded that this strategy is compatible with conventional processes in the semiconductor industry and may pave the way for emerging angle-sensitive applications in the near future.